Phase-transition Transistor Based on an Organic Mott-insulator Interface
نویسندگان
چکیده
منابع مشابه
Quantitative mapping of phase coexistence in Mott-Peierls insulator during electronic and thermally driven phase transition.
Quantitative impedance mapping of the spatially inhomogeneous insulator-to-metal transition (IMT) in vanadium dioxide (VO2) is performed with a lateral resolution of 50 nm through near-field scanning microwave microscopy (SMM) at 16 GHz. SMM is used to measure spatially resolved electronic properties of the phase coexistence in an unstrained VO2 film during the electrically as well as thermally...
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ژورنال
عنوان ژورنال: Hyomen Kagaku
سال: 2011
ISSN: 0388-5321,1881-4743
DOI: 10.1380/jsssj.32.33